The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Nov. 24, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Xue Bai Pitner, Sunnyvale, CA (US);

Deepanshu Dutta, Fremont, CA (US);

Ravi Kumar, Redwood City, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/30 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3454 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01);
Abstract

A memory apparatus and method of operation is provided. The apparatus includes a block of memory cells each connected to one of a plurality of word lines and arranged in strings and configured to retain a threshold voltage. A control circuit couples to the word lines and the strings determines a program lower tail voltage of a distribution of the threshold voltage following a first program pulse. The control circuit calculates a second program voltage of a second program pulse based on the program lower tail voltage and applies the second program pulse to each of selected ones of the plurality of word lines associated with the memory cells to program the memory cells such that the distribution of the threshold voltage of the memory cells have a desired program lower tail voltage without further program pulses.


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