The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Feb. 09, 2021
Applicant:

AU Optronics Corporation, Hsin-Chu, TW;

Inventors:

Kai-Wei Shiau, Hsin-Chu, TW;

Chia-Yuan Yeh, Hsin-Chu, TW;

Kuang-Hsiang Liu, Hsin-Chu, TW;

Assignee:

AU OPTRONICS CORPORATION, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/045 (2013.01); G09G 2330/021 (2013.01);
Abstract

A pixel circuit of low power consumption is provided, which includes a first transistor for providing a driving current, a light emitting element, a light emitting control circuit, a reset circuit, a writing circuit, and a storage capacitor. The light emitting control circuit is coupled between the first transistor and the light emitting element, and is for selectively conducting the driving current to the light emitting element. The reset circuit is for providing a first reference voltage to the light emitting element by a first frequency. The storage capacitor is coupled between the writing circuit and the first transistor. The writing circuit is for providing, by a second frequency different from the first frequency, a data voltage and a second reference voltage to the storage capacitor and the first transistor, respectively. The storage capacitor is for storing a first voltage for compensating a threshold voltage of the first transistor.


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