The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Oct. 27, 2017
Applicant:

University of Florida Research Foundation, Inc., Gainesville, FL (US);

Inventors:

Jack D. Kendall, Millbrae, CA (US);

Juan C. Nino, Gainesville, FL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/08 (2006.01); G06N 3/04 (2006.01); G06N 3/063 (2006.01); G11C 11/54 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G06N 3/08 (2013.01); G06N 3/049 (2013.01); G06N 3/063 (2013.01); G06N 3/0635 (2013.01); G06N 3/088 (2013.01); G11C 11/54 (2013.01); G11C 13/0069 (2013.01); G11C 2213/72 (2013.01); G11C 2213/78 (2013.01);
Abstract

Memristive learning concepts for neuromorphic circuits are described. In one example case, a neuromorphic circuit includes a first oscillatory-based neuron that generates a first oscillatory signal, a diode that rectifies the first oscillatory signal, and a synapse coupled to the diode and including a long-term potentiation (LTP) memristor arranged in parallel with a long-term depression (LTD) memristor. The circuit further includes a difference amplifier coupled to the synapse that generates a difference signal based on a difference between output signals from the LTP and LTD memristors, and a second oscillatory-based neuron electrically coupled to the difference amplifier that generates a second oscillatory signal based on the difference signal. The circuit also includes a feedback circuit that provides a feedback signal to the LTP and LTD memristors based on a difference or error between a target signal and the second oscillatory signal.


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