The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Oct. 28, 2020
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Teppei Adachi, Joetsu, JP;
Shinya Yamashita, Joetsu, JP;
Masaki Ohashi, Joetsu, JP;
Takayuki Fujiwara, Joetsu, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where Wrepresents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; Wrepresents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and Mrepresents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.