The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Mar. 03, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Yusheng Bian, Ballston, NY (US);

Ajey Poovannummoottil Jacob, Watervliet, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/35 (2006.01); G02B 6/293 (2006.01); G02B 6/36 (2006.01); G02B 6/42 (2006.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01);
U.S. Cl.
CPC ...
G02B 6/3512 (2013.01); G02B 6/12004 (2013.01); G02B 6/29359 (2013.01); G02B 6/3608 (2013.01); G02B 6/4283 (2013.01); G02B 6/1228 (2013.01); G02B 2006/12104 (2013.01);
Abstract

One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.


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