The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Jul. 25, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-Yub Ie, Hwaseong-si, KR;

Guk-Hyon Yon, Hwaseong-si, KR;

Jung-Geun Jee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/48 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45531 (2013.01); C23C 16/24 (2013.01); C23C 16/45553 (2013.01); C23C 16/481 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01); H01L 21/02123 (2013.01);
Abstract

An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.


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