The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Sep. 17, 2015
Applicant:

The Trustees of the University of Pennsylvania, Philadelphia, PA (US);

Inventors:

Marija Drndic, Philadelphia, PA (US);

Julio A. Rodriguez-Manzo, Philadelphia, PA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 67/00 (2006.01); G01N 33/487 (2006.01); B01D 71/02 (2006.01); H01J 37/317 (2006.01); H01J 37/31 (2006.01); C12Q 1/6869 (2018.01); G01N 27/447 (2006.01); H01J 37/305 (2006.01);
U.S. Cl.
CPC ...
B01D 67/006 (2013.01); B01D 71/02 (2013.01); C12Q 1/6869 (2013.01); G01N 27/44791 (2013.01); G01N 33/48721 (2013.01); H01J 37/3056 (2013.01); H01J 37/31 (2013.01); H01J 37/317 (2013.01); B01D 2325/02 (2013.01); B01D 2325/04 (2013.01); H01J 2237/3118 (2013.01);
Abstract

The invention concerns methods for preparing a nanoporous silicon nitride membrane comprising (i) ablating portions of at least one side of the membrane with an electron beam to reduce the thickness of the portions to between about 0.5 and 5 nanometers, and (ii) penetrating subportions of the ablated portions of the membrane with an electron beam to form nanopores having internal surfaces which are predominantly silicon rich compared to unablated portions of the membrane.


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