The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Jan. 28, 2020
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventor:

Liang Liang Guo, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/10 (2006.01); H03H 9/10 (2006.01); H01L 23/055 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H03H 9/1014 (2013.01); H01L 23/10 (2013.01); H01L 23/055 (2013.01); H01L 23/147 (2013.01); H01L 2224/11 (2013.01); H01L 2924/16235 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes providing a substrate having a front surface and a back surface, forming first and second through holes in the substrate, filling the first and second through holes with metals, forming a subassembly on the front surface of the substrate. The subassembly includes a first metal layer and a second metal layer insulated from the first metal layer, the first metal layer is electrically connected to the metal filled in the first through hole, the second metal layer is electrically connected to the metal filled in the second through hole, and a metal connection pad is on the substrate and surrounds the subassembly. The method also includes providing a cap assembly including a metal connection member, bonding the cap assembly to the subassembly, and thinning the back surface of the substrate to expose the first and second through holes.


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