The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Sep. 12, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Takashi Kawamura, Kanagawa, JP;

Masahiro Sato, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/40 (2015.01); H03F 3/24 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/60 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/56 (2013.01); H04B 1/40 (2013.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract

Provided is a high-frequency amplifier capable of making a circuit substrate small and reducing a cost. A high-frequency amplifier is provided with a first substrate including a matching unit, and a second substrate including a transistor and a first impedance converter connected to each other, in which the matching unit of the first substrate and the first impedance converter are connected to each other via a first connection. Furthermore, the high-frequency amplifier is further provided with a third substrate including a matching unit, in which the second substrate may further include a second impedance converter connected to the transistor, and the second impedance converter and the matching unit of the third substrate may be connected to each other via a second connection.


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