The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Jul. 10, 2017
Applicant:

Rensselaer Polytechnic Institute, Troy, NY (US);

Inventors:

Bassem Fahs, Troy, NY (US);

Mona Hella, Troy, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03B 5/12 (2006.01); H03B 5/18 (2006.01);
U.S. Cl.
CPC ...
H03B 5/1212 (2013.01); H03B 5/1228 (2013.01); H03B 5/1841 (2013.01); H03B 5/1852 (2013.01);
Abstract

A high frequency push-push oscillator is disclosed. The high frequency push-push oscillator includes a resonant circuit, including tank transmission lines or an inductor capacitor (LC) tank circuit, for generating a differential signal having a resonant frequency, and a Gm-core circuit for converting the differential signal to an output signal having an output frequency that is higher than the resonant frequency. The Gm-core circuit includes cross-coupled first and second transistors having first and second gates, drains, and sources, respectively, and first and second gate transmission lines. The first and second drains are in electrical communication with the resonant circuit. The first gate transmission line is joined with the first gate and the resonant circuit and the second gate transmission line is joined with the second gate and the resonant circuit. The Gm-core circuit includes a differential transmission line positioned between the first and second gates of the first and second transistors.


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