The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Jun. 08, 2018
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Sven Gerhard, Alteglofsheim, DE;

Christoph Eichler, Donaustauf, DE;

Alfred Lell, Maxhütte-Haidhof, DE;

Bernhard Stojetz, Wiesent, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/32 (2006.01); H01S 5/042 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/04253 (2019.08); H01S 5/04254 (2019.08); H01S 5/3211 (2013.01); H01S 5/32341 (2013.01); H01S 2301/16 (2013.01);
Abstract

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.


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