The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Mar. 06, 2020
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Akio Amano, Machida, JP;

Hideyuki Nakao, Setagaya, JP;

Kenji Todori, Yokohama, JP;

Kenji Fujinaga, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 51/44 (2006.01); H01G 9/20 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/442 (2013.01); H01G 9/2022 (2013.01); H01L 51/0014 (2013.01); H01L 51/0023 (2013.01); H01L 51/0029 (2013.01); H01L 2251/10 (2013.01); H01L 2251/308 (2013.01);
Abstract

A photoelectric conversion device in an embodiment includes a first photoelectric conversion part including a first transparent electrode, a first photoelectric conversion layer, and a first counter electrode and a second photoelectric conversion part including a second transparent electrode, a second photoelectric conversion layer, and a second counter electrode, the first photoelectric conversion part and the second photoelectric conversion part being provided on a transparent substrate. The first counter electrode and the second transparent electrode are electrically connected by a connection part. As for the first photoelectric conversion layer and the second photoelectric conversion layer, adjacent portions of the adjacent first and second photoelectric conversion layers are electrically separated by an inactive region having electrical resistance higher than that of the first and second photoelectric conversion layers.


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