The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Mar. 12, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Karthik Yogendra, Albany, NY (US);

Robert Robison, Rexford, NY (US);

Eric Raymond Evarts, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first free layer, forming a first tunnel barrier layer on the free layer, forming a reference layer on the first tunnel barrier layer, forming a second tunnel barrier layer on the reference layer, and forming a second free layer on the second tunnel barrier layer. An area of the second free layer is less than an area of the first free layer. Also, the first free layer, the first tunnel barrier layer and the reference layer are a first magnetic tunnel junction, and the reference layer, the second tunnel barrier layer and the second free layer are a second magnetic tunnel junction.


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