The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Nov. 13, 2018
Applicant:
Ams Ag, Premstaetten, AT;
Inventors:
Ingrid Jonak-Auer, Premstaetten, AT;
Gerald Meinhardt, Premstaetten, AT;
Bernhard Löffler, Premstaetten, AT;
Assignee:
AMS AG, Premstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 21/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/105 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); H01L 27/14649 (2013.01); H01L 31/028 (2013.01); H01L 31/105 (2013.01);
Abstract
The near-infrared photodetector semiconductor device comprises a semiconductor layer () of a first type of conductivity with a main surface (), a trench or a plurality of trenches () in the semiconductor layer at the main surface, a SiGe alloy layer () in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.