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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11335822 B1

PDFFull Text
Date of Patent:
May. 17, 2022

Filed:

Mar. 12, 2020

Multijunction solar cell having patterned emitter and method of making the solar cell

Applicant:

The Boeing Company, Chicago, IL (US);

Inventors:

Christopher M. Fetzer, Valencia, CA (US);

Peter Hebert, Glendale, CA (US);

Assignee:

THE BOEING COMPANY, Chicago, IL (US);

Attorney:

MH2 Technology Law Group LLP

Primary Examiner:

Earl N Taylor

Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0352 (2006.01); H01L 31/061 (2012.01); H01L 31/078 (2012.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/032 (2006.01); H01L 31/0725 (2012.01); H01L 31/074 (2012.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); H01L 31/028 (2013.01); H01L 31/0296 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/0304 (2013.01); H01L 31/0322 (2013.01); H01L 31/03046 (2013.01); H01L 31/0352 (2013.01); H01L 31/03529 (2013.01); H01L 31/035209 (2013.01); H01L 31/061 (2013.01); H01L 31/074 (2013.01); H01L 31/078 (2013.01); H01L 31/0725 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); H01L 31/184 (2013.01); H01L 31/1808 (2013.01); H01L 31/1868 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01); Y02E 10/549 (2013.01); Y02P 70/50 (2015.11);
Abstract

A multijunction solar cell includes a base substrate comprising a Group IV semiconductor and a dopant of a first carrier type. A patterned emitter is formed at a first surface of the base substrate. The patterned emitter comprises a plurality of well regions doped with a dopant of a second carrier type in the Group IV semiconductor. The base substrate including the patterned emitter form a first solar subcell. The multijunction solar cell further comprises an upper structure comprising one or more additional solar subcells over the first solar subcell. Methods of making a multijunction solar cell are also described.

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