The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Sep. 30, 2020
Applicant:

Innolight Technology (Suzhou) Ltd., Jiangsu, CN;

Inventors:

Chih-Kuo Tseng, Jiangsu, CN;

Xianyao Li, Jiangsu, CN;

Yuzhou Sun, Jiangsu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/105 (2006.01); H01L 31/028 (2006.01); H01L 31/101 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 31/028 (2013.01); H01L 31/101 (2013.01); H01L 31/105 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12123 (2013.01);
Abstract

A waveguide photoelectric detector, comprising: a substrate comprising a silicon layer, the silicon layer having a silicon waveguide formed thereon; an active layer dispose on the silicon waveguide, the active layer having a first doped region formed thereon; a horizontal PIN junction formed at an area of the silicon layer below the active layer, the horizontal PIN junction comprising a second doped region, an intrinsic region, and a third doped region. A doping type of the second doped region is the same as that of the first doped region. One end of the second doped region near the intrinsic region is connected to the first doped region. The third doped region and the first doped region form a vertical PIN junction.


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