The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Apr. 17, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Yen Chen, Tainan, TW;
Chang-Xiang Hung, Budai Township, Chiayi County, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device includes a channel layer disposed on a substrate, a barrier layer disposed on the channel layer, and a nitride layer disposed on the barrier layer. The semiconductor device also includes a compound semiconductor layer that includes an upper portion and a lower portion, wherein the lower portion penetrates through the nitride layer and a portion of the barrier layer. The semiconductor device also includes a spacer layer conformally disposed on a portion of the barrier layer and extending onto the nitride layer. The semiconductor device further includes a gate electrode disposed on the compound semiconductor layer, and a pair of source/drain electrodes disposed on opposite sides of the gate electrode. The pair of source/drain electrodes extends through the spacer layer, the nitride layer, and at least a portion of the barrier layer.