The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Feb. 09, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kenichi Matsushita, Nonoichi Ishikawa, JP;
Tatsuya Ohguro, Kanazawa Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor part, a terminal insulating film, a first protective film, a second electrode, a terminal electrode, a first insulating film, and a second protective film. The terminal insulating film is provided on the semiconductor part in the terminal region. The first protective film is provided on the terminal insulating film. The first and second protective films includes silicon and nitrogen. The second electrode is provided on the semiconductor part in the cell region and includes an end portion located on the first protective film. The terminal electrode is provided on the first protective film in the terminal region and is connected to the semiconductor part. The first insulating film is provided on the first protective film. The first insulating film includes hydrogen and contacts the second electrode and the terminal electrode. The second protective film covers the first insulating film.