The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Nov. 13, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Takushi Shigetoshi, Nagasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 21/3065 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01);
Abstract

To suppress variation in transistor characteristics due to charging damage to relieve restrictions on design necessary for avoiding the charging damage and improve the degree of freedom in design for increasing semiconductor integration. A semiconductor device includes a vertical electrode formed in a vertical hole extending from an opening portion toward a portion to be connected in a thickness direction of a base, and having a structure in which a barrier metal film and a conductive material are stacked sequentially from a side close to an insulating film exposed to the vertical hole, and a low-resistance film provided to lie between the barrier metal film and the insulating film except a vicinity of the portion to be connected, and having a lower resistance value than a resistance value of the insulating film.


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