logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11335595 B1

PDFFull Text
Date of Patent:
May. 17, 2022

Filed:

Feb. 07, 2018

Method of manufacturing a semiconductor element front side electrode

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Masatoshi Sunamoto, Tokyo, JP;

Ryuji Ueno, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Buchanan, Ingersoll & Rooney PC

Primary Examiner:

Scott B Geyer

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); C23C 18/32 (2006.01); C23C 18/42 (2006.01); C23C 18/50 (2006.01); C23C 18/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76874 (2013.01); C23C 18/32 (2013.01); C23C 18/42 (2013.01); C23C 18/50 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); C23C 18/1675 (2013.01); C23C 18/1683 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05013 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05644 (2013.01);
Abstract

Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.

Find Patent Forward Citations

Sunamoto, Masatoshi. (2022). Method of manufacturing a semiconductor element front side electrode (U.S. Patent No. 11335595). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11335595

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…