The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Mar. 25, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Kohei Nishiguchi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 21/28 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76859 (2013.01); H01L 21/28044 (2013.01); H01L 23/49838 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01);
Abstract
A method for manufacturing a semiconductor device () includes, in the following order: forming a first insulating film () on a semiconductor substrate (); forming, on the first insulating film (), wiring in which at least the uppermost layer is made of Au (); implanting ions, which do not impair insulating properties even when implanted into the insulating film (), into the upper surface of the wiring () and a region not covered with the wiring () on the upper surface of the first insulating film (); and forming a second insulating film () that covers the wiring ().