The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Apr. 29, 2020
Applicant:
Qromis, Inc., Santa Clara, CA (US);
Inventors:
Vladimir Odnoblyudov, Danville, CA (US);
Cem Basceri, Los Gatos, CA (US);
Assignee:
QROMIS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/02 (2006.01); H01L 29/20 (2006.01); H01L 23/00 (2006.01); C30B 29/40 (2006.01); C30B 29/68 (2006.01); H01L 21/78 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); C30B 25/02 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02367 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/7806 (2013.01); H01L 23/562 (2013.01); H01L 29/2003 (2013.01); H01L 21/2056 (2013.01);
Abstract
A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.