The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Aug. 16, 2019
Applicant:
Nutech Ventures, Lincoln, NE (US);
Inventors:
Jinsong Huang, Lincoln, NE (US);
Xiaopeng Zheng, Lincoln, NE (US);
Assignee:
NUTECH VENTURES, Lincoln, NE (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/20 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01G 9/00 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01G 9/2009 (2013.01); H01G 9/0036 (2013.01); H01G 9/2018 (2013.01); H01G 9/2059 (2013.01); H01L 51/0003 (2013.01); H01L 51/0046 (2013.01); H01L 51/0077 (2013.01); H01L 51/424 (2013.01); H01L 51/4213 (2013.01); H01L 51/4253 (2013.01); H01L 51/442 (2013.01); H01L 51/448 (2013.01); H01L 51/0035 (2013.01); H01L 51/0072 (2013.01); H01L 2251/301 (2013.01); H01L 2251/308 (2013.01);
Abstract
Semiconductor devices, and methods of forming the same, include a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer. A passivation layer is disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a layer of material that passivates both cationic and anionic defects in the surface of the active layer.