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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11335414 B1

PDFFull Text
Date of Patent:
May. 17, 2022

Filed:

Apr. 24, 2020

Method of determining read reference voltage for blocks based on number of erroneous bits

Applicant:

Innogrit Technologies Co., Ltd, Shanghai, CN;

Inventors:

Tao Wei, Shanghai, CN;

Zhengtian Feng, Shanghai, CN;

Ke Wei, Shanghai, CN;

Assignee:

INNOGRIT TECHNOLOGIES CO., LTD., Shanghai, CN;

Attorney:

Womble Bond Dickinson (US) LLP

Primary Examiner:

Mushfique Siddique

Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01); G01R 19/165 (2006.01); G11C 16/26 (2006.01); G11C 29/02 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G01R 19/16566 (2013.01); G11C 16/26 (2013.01); G11C 16/34 (2013.01); G11C 29/028 (2013.01); G11C 11/5642 (2013.01);
Abstract

A method and apparatus for determining a reference voltage id disclosed. The method may include: reading data from a first flash memory page by using different reference voltages, and taking, as a first target reference voltage, one of the different reference voltages at which the first number of erroneous bits of the data that is read reaches a converegence value. The first flash memory page is any one of multiple flash memory pages of a flash memory block to be tested. The method may include adjusting the first target reference voltage to obtain second target reference voltages; and reading data from the flash memory pages by using the second target referece voltages, and taking, as a target reference voltage, one of the second target reference voltages at which the second number of erroneous bits of the data that is read is the smallest.

Find Patent Forward Citations

Wei, Tao. (2022). Method of determining read reference voltage for blocks based on number of erroneous bits (U.S. Patent No. 11335414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11335414

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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