The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Jan. 28, 2021
National Tsing Hua University, Hsinchu, TW;
Yen-Hsiang Huang, Hsinchu, TW;
Sheng-Po Huang, Hsinchu, TW;
Cheng-Xin Xue, Hsinchu, TW;
Meng-Fan Chang, Hsinchu, TW;
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Abstract
A memory unit with multiple word lines for a plurality of non-volatile computing-in-memory applications is configured to compute a plurality of input signals and a plurality of weights. The memory unit includes a non-volatile memory cell array, a replica non-volatile memory cell array and a multi-row current calibration circuit. The non-volatile memory cell array is configured to generate a bit-line current. The replica non-volatile memory cell array includes a plurality of replica non-volatile memory cells and is configured to generate a calibration current. Each of the replica non-volatile memory cells is in the high resistance state. The multi-row current calibration circuit is electrically connected to the non-volatile memory cell array and the replica non-volatile memory cell array. The multi-row current calibration circuit is configured to subtract the calibration current from a dataline current to generate a calibrated dataline current. The dataline current is equal to the bit-line current.