The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Sep. 03, 2020
Applicant:

Postech Research and Business Development Foundation, Pohang-si, KR;

Inventors:

Jinseok Kim, Incheon, KR;

Yulhwa Kim, Daegu, KR;

Jae-Joon Kim, Pohang-si, KR;

Hyungjun Kim, Pohang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/41 (2006.01); G06N 3/08 (2006.01); G11C 11/412 (2006.01); G11C 11/418 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G06N 3/08 (2013.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01);
Abstract

Disclosed are a first memory cell, a second memory cell, and an amplification circuit. The first memory cell outputs a first voltage through a first bit line or a second voltage through a second bit line, based on first input data received through a first word line and a second word line and a first weight. The second memory cell outputs a third voltage through the first bit line or a fourth voltage through the second bit line, based on second input data received through a third word line and a fourth word line and a second weight. The amplification circuit generates an output voltage having a level corresponding to a sum of a level of a voltage received through the first bit line and a level of a voltage received through the second bit line.


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