The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Apr. 15, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hye Lim Choi, Yongin-si, KR;

Yeon Keon Moon, Hwaseong-si, KR;

Joon Seok Park, Yongin-si, KR;

Myoung Hwa Kim, Seoul, KR;

Tae Sang Kim, Seoul, KR;

Hyung Jun Kim, Seoul, KR;

Geun Chui Park, Suwon-si, KR;

Kyung Jin Jeon, Incheon, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/32 (2016.01); G09G 3/3291 (2016.01); H01L 27/32 (2006.01); G09G 3/3266 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3291 (2013.01); G09G 3/3266 (2013.01); H01L 27/3272 (2013.01);
Abstract

A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light emitting element and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from a respective data line of the data lines, the first transistor includes a first active layer including an oxide semiconductor containing indium (In), and a content of the indium in the oxide semiconductor of the first active layer is 70 at % or more.


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