The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Dec. 20, 2019
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Jong-Hwan Lee, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/30 (2006.01); G11C 11/4074 (2006.01); G06F 11/07 (2006.01); G06F 1/14 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/3058 (2013.01); G06F 1/14 (2013.01); G06F 11/076 (2013.01); G06F 11/1044 (2013.01); G06F 11/3037 (2013.01); G11C 11/4074 (2013.01);
Abstract

A memory system may include a memory device including a plurality of memory cells, and a controller suitable for controlling the memory device to perform a first read operation by applying a first read voltage to a target memory cell in which data corresponding to a read command provided from a host is stored. When the number of fail bits in first read data read through the first read operation is greater than or equal to a preset threshold value, the controller may check outside temperature recorded in a temperature table based on real time clock (RTC) information and country information which are provided from the host, set a second read voltage based on the outside temperature and a read voltage table, and control the memory device to perform a second read operation by applying the second read voltage to the target memory cell.


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