The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Feb. 26, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Byounghoon Lee, Seoul, KR;
Yongseok Jung, Seoul, KR;
Jumi Bang, Hwaseong-si, KR;
Byoungsup Ahn, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/095 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/308 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
G03F 7/095 (2013.01); G03F 7/168 (2013.01); G03F 7/2002 (2013.01); G03F 7/2006 (2013.01); G03F 7/2037 (2013.01); G03F 7/26 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract
Disclosed are methods of forming a pattern and methods of fabricating a semiconductor device. A method of fabricating a semiconductor device may include providing a substrate comprising a resist layer on the substrate and coating a compound on the resist layer to form a charge dissipation layer. The charge dissipation layer may include a conductive polymer and a metal complex.