The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Nov. 09, 2018
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventor:

Itaru Yanagi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3063 (2006.01); G01N 27/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/002 (2013.01); H01L 21/3063 (2013.01);
Abstract

Provided are a hole forming method and a hole forming apparatus capable of stably forming a single nanopore on a membrane. This hole forming method is a hole forming method for forming a hole in a film and includes: a first step of applying a first voltage between a first electrode and a second electrode, installed so as to sandwich the film provided in an electrolyte, and stopping the application of the first voltage when a current flowing between the first electrode and the second electrode reaches a first threshold current so as to form a thin film portion in a part of the film; and a second step of applying a second voltage between the first electrode and the second electrode after the first step so as to form a nanopore in the thin film portion.


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