The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2022

Filed:

Sep. 03, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Kyosuke Ito, Kanagawa, JP;

Toshifumi Wakano, Kanagawa, JP;

Yusuke Otake, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/44 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
G01J 1/44 (2013.01); H01L 31/107 (2013.01); G01J 2001/4466 (2013.01);
Abstract

An avalanche photodiode sensor includes a photoelectric conversion region disposed in a substrate and that converts incident light into electric charge. The avalanche photodiode sensor includes a first region of a first conductivity type on the photoelectric conversion region, and a cathode disposed in the substrate adjacent to the first region and coupled to the photoelectric conversion region. The avalanche photodiode sensor includes an anode disposed in the substrate adjacent to the cathode, and a contact of the first conductivity type disposed in the substrate. An impurity concentration of the first region is different than an impurity concentration of the contact.


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