The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Jan. 18, 2019
Applicant:
SK Siltron Co., Ltd., Gumi-si Gyeongsangbuk-do, KR;
Inventors:
Jong Min Kang, Gumi-si, KR;
Il Soo Choi, Gumi-si, KR;
Assignee:
SK Siltron Co., Ltd., Gumi-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C30B 15/22 (2006.01); C30B 15/36 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/22 (2013.01); C30B 15/10 (2013.01); C30B 15/36 (2013.01); C30B 29/06 (2013.01);
Abstract
An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).