The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Nov. 13, 2020
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Osaka University, Suita, JP;
Nichia Corporation, Anan, JP;
Tsukasa Torimoto, Nagoya, JP;
Tatsuya Kameyama, Nagoya, JP;
Marino Kishi, Iwakura, JP;
Susumu Kuwabata, Ibaraki, JP;
Taro Uematsu, Suita, JP;
Daisuke Oyamatsu, Tokushima, JP;
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM, Nagoya, JP;
OSAKA UNIVERSITY, Suita, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.