The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Jan. 29, 2021
Aac Acoustic Technologies (Shenzhen) Co., Ltd., Shenzhen, CN;
Wooicheang Goh, Singapore, SG;
Shrowthi S. N. Bharadwaja, Irvine, CA (US);
Kahkeen Lai, Singapore, SG;
AAC Technologies Pte. Ltd., Singapore, SG;
Abstract
The present invention relates to the field of semiconductor technology and provides a method for forming an MEMS cavity structure, which can improve process yield for MEMS integration and encapsulation for functional stability and reliability of the MEMS structure. The method includes steps of: forming an adhesion material layer on a bottom layer; forming a bottom layer on a substrate; forming a adhesion material layer on the bottom layer; forming a support structure and a sacrificial layer that is filled in a space surrounded by the support structure on the adhesion material layer; forming a capping layer on the support structure and the sacrificial layer, and the bottom layer, the support structure and the capping layer together defining a cavity; and releasing the sacrificial layer and the adhesion material layer to form the cavity structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile