The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Dec. 04, 2017
Applicants:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Isorg, Limoges, FR;

Inventors:

Alexandre Pereira, Saint-Martin-le-Vinoux, FR;

Cédric Ducros, Bevenais, FR;

Wilfrid Schwartz, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 51/00 (2006.01); H01L 51/44 (2006.01); G01J 5/20 (2006.01); H01L 27/30 (2006.01);
U.S. Cl.
CPC ...
H01L 51/424 (2013.01); G01J 5/20 (2013.01); H01L 27/305 (2013.01); H01L 51/0097 (2013.01); H01L 51/4253 (2013.01); H01L 51/44 (2013.01); H01L 51/0036 (2013.01); H01L 51/0037 (2013.01); H01L 51/0043 (2013.01); Y02E 10/549 (2013.01);
Abstract

An infrared photodetector including a stack of layers on a substrate having an active area made of organic semiconductor materials capable of converting an infrared radiation into an electric signal and including, in said stack and/or on the substrate, a single layer at least partially filtering visible light.


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