The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Oct. 01, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seoul National University R&db Foundation, Seoul, KR;
Minhyun Lee, Suwon-si, KR;
Seongjun Park, Seoul, KR;
Hyunjae Song, Hwaseong-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Kibum Kim, Seoul, KR;
Sanghun Lee, Seoul, KR;
Yunho Kang, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Seoul National University R&DB Foundation, Seoul, KR;
Abstract
A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.