The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Apr. 06, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jungmin Lee, Gwangmyeong-si, KR;
Younghyun Kim, Seoul, KR;
Junghwan Park, Seoul, KR;
Sechung Oh, Yongin-si, KR;
Kyungil Hong, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of manufacturing a magnetoresistive random access memory, a memory structure may be formed on a substrate. The memory structure may include a lower electrode, a magnetic tunnel junction (MTJ) structure, and an upper electrode sequentially stacked. A protection layer including silicon nitride may be formed to cover a surface of the memory structure. The protection layer may be formed by a chemical vapor deposition process using plasma and introducing deposition gases including a silicon source gas, a nitrogen source gas containing no hydrogen and a dissociation gas. Damages of the MTJ structure may be decreased during forming the protection layer. Thus, the MRAM may have improved characteristics.