The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Jul. 24, 2020
Epistar Corporation, Hsinchu, TW;
Chao-Hsing Chen, Hsinchu, TW;
Jia-Kuen Wang, Hsinchu, TW;
Tzu-Yao Tseng, Hsinchu, TW;
Tsung-Hsun Chiang, Hsinchu, TW;
Bo-Jiun Hu, Hsinchu, TW;
Wen-Hung Chuang, Hsinchu, TW;
Yu-Ling Lin, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor light-emitting device includes a substrate; a first semiconductor layer and a second semiconductor layer formed on the substrate, wherein the first semiconductor layer includes a first exposed portion and a second portion; a plurality of first trenches formed on the substrate and including a surface composed by the first exposed portion; a second trench formed on the substrate and including a surface composed by the second exposed portion at a periphery region of the semiconductor light-emitting device, wherein each of the plurality of first trenches is branched from the second trench; and a patterned metal layer formed on the second semiconductor layer and including a first metal region and a second metal region, and portions of the second metal region are formed in the plurality of first trenches and the second trench to electrically connect to the first exposed portion and the second exposed portion.