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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11329182 B1

PDFFull Text
Date of Patent:
May. 10, 2022

Filed:

Mar. 23, 2021

Monolithic multiple solar cells

Applicant:

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Matthias Meusel, Heilbronn, DE;

Gerhard Strobl, Stuttgart, DE;

Frank Dimroth, Gundelfingen, DE;

Andreas Bett, Freiburg, DE;

Assignee:

AZUR SPACE Solar Power GmbH, Heilbronn, DE;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Andrew J Golden

Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/0216 (2014.01); H01L 31/0304 (2006.01); H01L 31/0687 (2012.01); H01L 31/056 (2014.01); H01L 31/052 (2014.01); H01L 31/047 (2014.01); H01L 31/054 (2014.01); H01L 31/0232 (2014.01); H01L 31/0735 (2012.01); H01L 31/074 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/02168 (2013.01); H01L 31/02327 (2013.01); H01L 31/03046 (2013.01); H01L 31/047 (2014.12); H01L 31/052 (2013.01); H01L 31/056 (2014.12); H01L 31/0547 (2014.12); H01L 31/0687 (2013.01); H01L 31/074 (2013.01); H01L 31/0735 (2013.01); Y02E 10/52 (2013.01); Y02E 10/544 (2013.01);
Abstract

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

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