The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Aug. 20, 2019
Applicant:
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Inventors:
Assignee:
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 27/108 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7841 (2013.01); H01L 21/02293 (2013.01); H01L 21/02532 (2013.01); H01L 21/32055 (2013.01); H01L 27/10802 (2013.01); H01L 29/861 (2013.01);
Abstract
A two-terminal biristor in which a polysilicon emitter layer is inserted and a method of manufacturing the same are provided. The method of manufacturing the two-terminal biristor according to an embodiment of the present disclosure includes forming a first semiconductor layer of a first type on a substrate, forming a second semiconductor layer of a second type on the first semiconductor layer, forming a third semiconductor layer of the first type on the second semiconductor layer, and forming a polysilicon layer of the first type on the third semiconductor layer.