The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Apr. 04, 2019
Renesas Electronics Corporation, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device of one embodiment includes the steps of: forming a drift region in a first surface of a semiconductor substrate; forming a body region having a first portion disposed in the first surface, and a second portion disposed in the first surface so as to surround the first portion and the drift region; forming a hard mask, having an opening over the drift region, in the first surface; forming a reverse conductivity region in the first surface by ion implantation using the hard mask; forming a trench in the first surface by anisotropic etching using the hard mask; and embedding an isolation film in the trench. The ion implantation is performed obliquely to the first surface such that ions are implanted below a first edge part, which is located on a first portion side of the opening, of the hard mask.