The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Sep. 18, 2018
Applicant:
Zhuzhou Crrc Times Electric Co., Ltd, Hunan, CN;
Inventors:
Assignee:
ZHUZHOU CRRC TIMES ELECTRIC CO., LTD, Zhuzhou, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/4925 (2013.01); H01L 29/7393 (2013.01);
Abstract
An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region () and a gate region. The gate region includes a planar gate region () and a trench gate region (), which are respectively disposed at both sides of the source region (). A planar gate and a trench gate are compositely disposed on the same cell (), thereby greatly improving chip density while retaining both trench gate's features of low on-state energy loss and high current density and planar gate's feature of wide safe operating area.