The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Mar. 22, 2019
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Wei Song, Beijing, CN;

Liangchen Yan, Beijing, CN;

Ce Zhao, Beijing, CN;

Heekyu Kim, Beijing, CN;

Yuankui Ding, Beijing, CN;

Leilei Cheng, Beijing, CN;

Yingbin Hu, Beijing, CN;

Wei Li, Beijing, CN;

Yang Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 51/56 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3258 (2013.01); H01L 27/3246 (2013.01); H01L 27/3262 (2013.01); H01L 29/41733 (2013.01); H01L 29/78603 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 51/0005 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01); H01L 2251/5392 (2013.01);
Abstract

The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.


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