The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Apr. 22, 2020
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Hideaki Ishino, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 27/146 (2006.01); H01L 23/544 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 23/544 (2013.01); H01L 27/14612 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01); H01L 24/48 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/08 (2013.01); H01L 2224/08147 (2013.01); H01L 2224/48463 (2013.01);
Abstract

A semiconductor apparatus includes a semiconductor layer having first and second faces, a semiconductor element portion in which semiconductor elements are provided, and openings each penetrating the semiconductor layer from the second face side, an interconnection structure provided on the first face side, and an insulator portion provided to surround at least one of the openings within a virtual plane along the second face and extend to a depth between T/2 and T from the first face, where T is the thickness of the semiconductor layer. The semiconductor layer includes a semiconductor region of one conductivity type provided on the opposite side to the one opening to the insulator portion within the virtual plane, and a semiconductor region of another conductivity type provided in the semiconductor layer from the insulator portion face on the second face side to the second face in a direction perpendicular to the second face.


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