The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jul. 31, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Masashi Murakami, Kyoto, JP;

Kazuko Nishimura, Kyoto, JP;

Yutaka Abe, Osaka, JP;

Yoshiyuki Matsunaga, Kyoto, JP;

Yoshihiro Sato, Osaka, JP;

Junji Hirase, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H01L 27/14632 (2013.01); H01L 27/14643 (2013.01); H01L 27/14665 (2013.01); H01L 27/14636 (2013.01); H01L 51/42 (2013.01);
Abstract

An imaging device including a semiconductor substrate; a photoelectric converter stacked on the semiconductor substrate, the photoelectric converter being configured to generate a signal through photoelectric conversion of incident light; a multilayer wiring structure located between the semiconductor substrate and the photoelectric converter; and circuitry located in the multilayer wiring structure and the semiconductor substrate, the circuitry being configured to detect the signal. The circuitry includes a first capacitance element and a second capacitance element; and a first transistor including a first source and a first drain in the semiconductor substrate and a first gate. The first capacitance element includes a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, the multilayer wiring structure includes an insulating layer adjacent to the first capacitance element, and a permittivity of the dielectric film is greater than a permittivity of the insulating layer.


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