The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Mar. 16, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Yoshiya Hagimoto, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 23/538 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5384 (2013.01); H01L 25/0657 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14625 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14683 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01);
Abstract

The present technology relates to a semiconductor device, a solid-state imaging device, and electronic equipment, which are able to suppress increase of resistivity to a high level at a connection portion between an ESV and a wiring layer and to improve reliability of an electric connection using an ESV. The semiconductor device according to the present technology has a plurality of semiconductor substrates layered, and includes a through electrode penetrating a silicon layer of the semiconductor substrates, a wiring layer formed inside the semiconductor substrates, and a through electrode reception part. The through electrode reception part is connected to the wiring layer, in which the through electrode has a width smaller than the through electrode reception part, and the through electrode is electrically connected to the wiring layer via the through electrode reception part. The present technology is applicable, for example, to a CMOS image sensor.


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