The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jun. 11, 2020
Applicants:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Jean-Jacques Fagot, Rousset, FR;

Philippe Boivin, Venelles, FR;

Franck Arnaud, St. Nazaire les Eymes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 29/808 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/7624 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 27/0605 (2013.01); H01L 27/0688 (2013.01); H01L 29/808 (2013.01);
Abstract

An electronic integrated circuit chip includes a first transistor arranged inside and on top of a solid substrate, a second transistor arranged inside and on top of a layer of semiconductor material on insulator having a first thickness, and a third transistor arranged inside and on top of a layer of semiconductor material on insulator having a second thickness. The second thickness is greater than the first thickness. The solid substrate extends underneath the layers of semiconductor material and is insulated from those layers by the insulator.


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