The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jun. 26, 2018
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Hiroshi Miyake, Kyoto, JP;

Nobuhiko Nishide, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H05B 3/00 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67115 (2013.01); H01L 21/6875 (2013.01); H01L 21/68707 (2013.01); H05B 3/0047 (2013.01);
Abstract

A light diffusion plate made of quartz and provided with a plurality of grooves each having an inclined surface is placed on an upper chamber window so as to be in opposed relation to a central portion of a semiconductor wafer. Flashes of light emitted from flash lamps and passing by the side of the light diffusion plate impinge upon a peripheral portion of the semiconductor wafer. On the other hand, flashes of light emitted from the flash lamps and entering the light diffusion plate are refracted by the inclined surfaces of the plurality of grooves. Part of the light entering the light diffusion plate is diffused toward the peripheral portion of the semiconductor wafer. As a result, this increases the amount of light impinging upon the peripheral portion of the semiconductor wafer, and decreases the amount of light impinging upon the central portion of the semiconductor wafer. Thus, the in-plane uniformity of an illuminance distribution on the semiconductor wafer is increased.


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