The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jun. 24, 2020
Applicant:

Showa Denko K.k., Tokyo, JP;

Inventor:

Yohei Fujikawa, Hikone, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 23/02 (2006.01); C23C 14/24 (2006.01);
U.S. Cl.
CPC ...
C30B 23/02 (2013.01); C23C 14/243 (2013.01); C30B 35/002 (2013.01);
Abstract

Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room temperature, and the outer diameter of the tip portion of the first protruding portion is larger than the inner diameter of the tip portion of the second protruding portion at a single crystal growth temperature.


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