The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Sep. 23, 2021
Applicant:

Shanghai Jiao Tong University, Shanghai, CN;

Inventors:

Han Jin, Shanghai, CN;

Daxiang Cui, Shanghai, CN;

Cuili Xue, Shanghai, CN;

Yuna Zhang, Shanghai, CN;

Yuli Xv, Shanghai, CN;

Yuan Zhou, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 15/00 (2006.01); G01N 27/406 (2006.01); B22F 9/04 (2006.01); G01N 27/30 (2006.01); G01N 27/333 (2006.01); B22F 1/142 (2022.01);
U.S. Cl.
CPC ...
C01G 15/00 (2013.01); B22F 1/142 (2022.01); B22F 9/04 (2013.01); G01N 27/301 (2013.01); G01N 27/333 (2013.01); G01N 27/406 (2013.01); B22F 2009/043 (2013.01); B22F 2302/25 (2013.01); C01P 2004/38 (2013.01);
Abstract

A preparation method of indium oxide with stable morphology includes: (1) mixing indium oxide powder and bismuth oxide powder according to a mass ratio of 1:0.1-0.5 to obtain a powder mixture; (2) putting the powder mixture into a ball mill for ball milling at room temperature to obtain a uniform powder mixture; (3) putting the obtained uniform powder mixture into a muffle furnace and calcining at 700-1000° C.; and (4) obtaining the indium oxide with cubic stable morphology after the muffle furnace naturally cools to room temperature. The method has advantages of simple synthesis process, short synthesis period, high sample yield, no need of complicated equipment, and morphology of the obtained indium oxide can be maintained after being heated at a high temperature within 1000° C. for 2 hours. An electrochemical sensor prepared by using the indium oxide obtained by the method has better selectivity to nonane.


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